IndiumV3, Russie, Analysis, bibRecord, 000182

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

Identifieur interne : 000182 ( Russie/Analysis ); précédent : 000181; suivant : 000183

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

Auteurs : RBID : Pascal:08-0369346

Descripteurs français

Pascal (Inist)
- Photoluminescence, Electroluminescence, Diode électroluminescente, Epitaxie jet moléculaire, Etude expérimentale, Température ambiante, Propriété optique, Point quantique, Couche monomoléculaire, Nanostructure, Composé binaire, Indium Arséniure, InAs, As In, 0130C, 8560J.

English descriptors

KwdEn :
- Binary compound, Electroluminescence, Experimental study, Indium Arsenides, Light emitting diode, Molecular beam epitaxy, Monolayer, Nanostructure, Optical properties, Photoluminescence, Quantum dot, Room temperature.

Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb₂ and As₂ fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T_Gr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb₂,As₂) and (Sb₄,As₄) is also presented.

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Pascal:08-0369346

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb<sub>2</sub>
 and As<sub>2</sub>
 fluxes</title>
<author><name sortKey="Carrington, P J" uniqKey="Carrington P">P. J. Carrington</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster, LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster, LA1 4YB</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Solov Ev, V A" uniqKey="Solov Ev V">V. A. Solov Ev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster, LA1 4YB</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Royaume-Uni</country>
<wicri:noRegion>Lancaster, LA1 4YB</wicri:noRegion>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
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<country>Russie</country>
<wicri:noRegion>St. Petersburg 194021</wicri:noRegion>
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</author>
<author><name sortKey="Zhuang, Q" uniqKey="Zhuang Q">Q. Zhuang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
<s2>Lancaster, LA1 4YB</s2>
<s3>GBR</s3>
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<author><name sortKey="Ivanov, S V" uniqKey="Ivanov S">S. V. Ivanov</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, Polytekhnicheskaya 26</s1>
<s2>St. Petersburg 194021</s2>
<s3>RUS</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>St. Petersburg 194021</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Krier, A" uniqKey="Krier A">A. Krier</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Lancaster University</s1>
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<term>Experimental study</term>
<term>Indium Arsenides</term>
<term>Light emitting diode</term>
<term>Molecular beam epitaxy</term>
<term>Monolayer</term>
<term>Nanostructure</term>
<term>Optical properties</term>
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<term>Epitaxie jet moléculaire</term>
<term>Etude expérimentale</term>
<term>Température ambiante</term>
<term>Propriété optique</term>
<term>Point quantique</term>
<term>Couche monomoléculaire</term>
<term>Nanostructure</term>
<term>Composé binaire</term>
<term>Indium Arséniure</term>
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<term>As In</term>
<term>0130C</term>
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<front><div type="abstract" xml:lang="en">We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb<sub>2</sub>
 and As<sub>2</sub>
 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T<sub>Gr</sub>
 = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb<sub>2</sub>
,As<sub>2</sub>
) and (Sb<sub>4</sub>
,As<sub>4</sub>
) is also presented.</div>
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 = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb<sub>2</sub>
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Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri